Samsung 990 Pro 4Tb Nvme M.2 Gen 4.0 Internal Ssd (MZ-V9P4T0BW)

Original price was: ₹78,999.Current price is: ₹37,030.

(53% OFF)

(Inclusive of all taxes)

Model No : MZ-V9P4T0BW
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Description

Samsung 990 Pro 4Tb Nvme M.2 Gen 4.0 Internal Ssd

Experience long-lasting fast performance of PCIe® 4.0. The in-house controller’s smart heat control delivers supreme power efficiency while maintaining speed and performance to help keep you on the top of your game.

PCIe 4.0 speed maximized

Huge speed boost. 990 PRO 4TB has Up to 40% and 55% faster random read/write speeds than 980 PRO – up to 1400K/1550K IOPS, while sequential read/write speeds up to 7450/6900 MB/s reach near max performance of PCIe® 4.0. Fly high in gaming, video and 3D editing, data analysis, and more.

Incredible power efficiency

More power-efficient performance. Higher performance usually consumes more power. But, 990 PRO 4TB uses less power with over 50% improved performance per Watt over 980 PRO. This low-power design delivers outstanding PCIe® 4.0 performance possible with optimal power efficiency.

Smart thermal solution

Speed beyond the heat. The nickel-coated controller and cutting-edge thermal control algorithm helps to manage heat for stable performance. The heat spreader label controls NAND chip heat, while Dynamic Thermal Guard keeps temperatures stable.

The champion maker

An amazing gameplay experience. Huge improvement in random performance enables faster loads for gaming realism on PS5 and DirectStorage PC games

Samsung Magician software

Harness the full power of 990 PRO 4TB. Samsung Magician software’s user-friendly suite of optimization tools always gets you the best performance out of your Samsung SSD. Protect data, get updates, monitor drive health, and set up LED color combinations. It’s your personal SSD toolkit.

World’s No.1 Flash Memory

Experience superior performance and reliability you only get from the world’s No.1 flash memory seller since 2003. All components and firmware are produced in-house, including Samsung’s world-renowned DRAM and NAND, for integrated start-to-finish quality you can trust.

Storage Form Factor M.2
Ssd Size 4 TB
Storage Type Solid State Drive
General Feature MZ-V9P4T0BW
Application Client PCs, Game Consoles
Capacity 4,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
Form Factor M.2 (2280)
Interface PCIe Gen 4.0 x4, NVMe 2.0
Dimension 80 x 22 x 2.3 mm
Weight Max 9.0g Weight
Storage Memory Samsung V-NAND 3-bit MLC
Controller Samsung in-house Controller
Cache Memory Samsung 1GB Low Power DDR4 SDRAM
Special Feature
TRIM Support Supported
S.M.A.R.T Support Supported
GC (Garbage Collection) Auto Garbage Collection Algorithm
Encryption Support AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
WWN Support Not supported
Device Sleep Mode Support Yes
Performance
Sequential Read Up to 7,450 MB/s * Performance may vary based on system hardware & configuration
Sequential Write Up to 6,900 MB/s * Performance may vary based on system hardware & configuration
Ramdom Read (4KB, QD32) Up to 1,600,000 IOPS * Performance may vary based on system hardware & configuration
Ramdom Write (4KB, QD32) Up to 1,550,000 IOPS * Performance may vary based on system hardware & configuration
Ramdom Read (4KB, QD1) Up to 22,000 IOPS * Performance may vary based on system hardware & configuration
Ramdom Write (4KB, QD1) Up to 80,000 IOPS * Performance may vary based on system hardware & configuration
Environment
Average Power Consumption *Average: 5.5 W*Maximum: 8.5 W (Burst mode)* Actual power consumption may vary depending on system hardware & configuration
Power Consumption (idle) Max. 55 mW * Actual power consumption may vary depending on system hardware & configuration
Allowable Voltage 3.3 V ± 5 % Allowable voltage
Reliability 1.5 Million Hours Reliability (MTBF)
Operating Temperature 0 – 70 ℃ Operating Temperature
Shock 1,500 G & 0.5 ms (Half sine)
Warranty 5-Year Limited Warranty or 2400 TBW Limited Warranty

Additional information

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